Search results for "Electron-beam lithography"
showing 10 items of 36 documents
Nanoscale strain-engineering and optics of quantum emitters in a two-dimensional semiconductor
2017
We present deterministic fabrication of a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. Resonant laser spectroscopy of these emitters reveals localized exciton states that exhibit stable, bright and high-purity single photon emission.
Performance of interdigitated nanoelectrodes for electrochemical DNA biosensor.
2003
An electrochemical methodology for bio-molecule sensing using an array of well-defined nanostructures is presented. We describe the fabrication by e-beam lithography of nanoelectrodes consisting of a 100 micro m x 50 micro m area containing interdigitated electrodes of 100 nm in width and interelectrode distance of 200 nm. Sensitivity and response time of the nanoelectrodes are compared to the responses of macro- and microelectrodes. The specificity of the sensor is studied by modifying the gold electrodes with DNA. The technique enables to characterize both single and double-stranded DNA of 15 nucleotides. A special electrochemical cell is adapted to control the temperature and measure the…
Artificially inscribed defects in opal photonic crystals
2005
Opals are three-dimensional photonic crystals, self-assembled from dielectric spherical beads into a face-centered cubic lattice. By introducing intentional defects in the crystal lattice, one modifies features such as spontaneous emission and the directionality of diffracted light. We here present a method for the artificial introduction of a lattice of such intentional defects in self-assembled poly(methyl methacrylate) (PMMA) photonic crystals by means of electron beam lithography. The inscribed defects are of the size of an individual bead, providing a broad spectral range between adjacent resonance peaks. This opens for devices with single line transmission in the photonic band gap, as…
Bringing Plasmonics Into CMOS Photonic Foundries: Aluminum Plasmonics on Si$_{3}$N$_{4}$ for Biosensing Applications
2019
We present a technology platform supported by a new process design kit (PDK) that integrates two types of aluminum plasmonic waveguides with Si $_{3}$ N $_{4}$ photonics towards CMOS-compatible plasmo-photonic integrated circuits for sensing applications. More specifically, we demonstrate the fabrication of aluminum slot waveguide via e-beam lithography (EBL) on top of the Si $_{3}$ N $_{4}$ waveguide and an optimized fabrication process of aluminum plasmonic stripe waveguides within a CMOS foundry using EBL. Experimental measurements revealed a propagation length of 6.2 μm for the plasmonic slot waveguide in water at 1550 nm, reporting the first ever experimental demonstration of a plasmon…
Intregrating metallic wiring with three-dimensional polystyrene colloidal crystals using electron-beam lithography and three-dimensional laser lithog…
2017
We demonstrate a method to fabricate narrow, down to a few micron wide metallic leads on top of a three-dimensional colloidal crystal self-assembled from polystyrene (PS) nanospheres of diameter 260 nm, using electron-beam lithography. This fabrication is not straightforward due to the fact that PS nanospheres cannot usually survive the harsh chemical treatments required in the development and lift-off steps of electron-beam lithography. We solve this problem by increasing the chemical resistance of the PS nanospheres using an additional electron-beam irradiation step, which allows the spheres to retain their shape and their self-assembled structure, even after baking to a temperature of 16…
Sensing properties of assembled Bi2S3nanowire arrays
2015
Bismuth sulfide (Bi2S3) nanowires were grown in porous aluminium oxide template and a selective chemical etching was applied to transfer the nanowires to a solution. Well aligned nanowire arrays were assembled on pre-patterned silicon substrates employing dielectrophoresis. Electron beam lithography was used to connect aligned individual nanowires to the common macroelectrode. In order to evaluate the conductometric sensing performance of the Bi2S3 nanowires, current–voltage characteristics were measured at different relative humidity (RH) levels (5–80%) / argon medium. The response of the Bi2S3 nanowires depending of RH is found to be considerably different from those reported for other ty…
Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions
1999
We fabricated chromium based single-electron transistors comprising small-area Cr/CrOx/Cr tunnel junctions with an evaporated chromium oxide barrier. The transistors are fabricated using e-beam lithography with a bilayer resist and two-angle shadow evaporation. We describe the fabrication process and discuss the device characteristics.
Fabrication and characterization of small tunnel junctions through a thin dielectric membrane
1998
We show that a small tapered hole through a thin silicon nitride membrane provides a mask for tunnel junction structures. Our experiments imply, unlike in the conventional planar electron beam lithography, that tunnel junctions are well voltage biased in this structure with vanishingly small on-chip impedance. Our technique allows fabrication of double junctions, and even multijunction linear arrays, with small metallic islands in between.
Influence of the Number of Nanoparticles on the Enhancement Properties of Surface-Enhanced Raman Scattering Active Area: Sensitivity versus Repeatabi…
2011
In the present work, the combination of chemical immobilization with electron beam lithography enables the production of sensitive and reproducible SERS-active areas composed of stochastic arrangements of gold nanoparticles. The number of nanoparticles was varied from 2 to 500. Thereby a systematic analysis of these SERS-active areas allows us to study SERS efficiency as a function of the number of nanoparticles. We found that the experimental parameters are critical, in particular the size of the SERS-active area must be comparable to the effective area of excitation to obtained reproducible SERS measurements. The sensitivity has also been studied by deducing the number of NPs that generat…
Nano-lithography using a resist, patterned by electron exposure in an AFM configuration
1996
We have used a metallised force microscope tip to apply a voltage and thereby expose a very thin resist film. It is possible to image the film surface before, during and after the exposure, without interference with the process. Uniform resist films as thin as 10 nm are fabricated using the Langmuir-Blodgett technique. To orient the defined pattern and to make electrical connections a special larger scale alignment structure is first defined by conventional electron beam lithography, either directly in the Langmuir-Blodgett resist film or in a complete first process with a separate resist system. The results from the one resist process gave conducting 50 nm lines in a 60 A thick aluminium f…